Биполярный транзистор NST3904DXV6T1G Даташит. Аналоги
Наименование производителя: NST3904DXV6T1G
Маркировка: MA
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT563
Аналог (замена) для NST3904DXV6T1G
NST3904DXV6T1G Datasheet (PDF)
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf

Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide
nst3904dxv6t1-5.pdf

NST3904DXV6T1,NST3904DXV6T5Dual General PurposeTransistorThe NST3904DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power su
nst3904dxv6t.pdf

NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag
nst3904dp6.pdf

NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
Другие транзисторы... NSBA114TDXV6T1G , NSBA114TDXV6T5G , NSBA114TF3T5G , NSBA114YDP6T5G , NSBA114YDXV6T1G , NSBA114YF3T5G , NST30010MXV6T1G , NST3904DP6T5G , SS8050 , NST3904DXV6T5G , NST3906DP6T5G , NST3906DXV6T1G , NST3946DP6T5G , NST3946DXV6T1G , NST3946DXV6T5G , NST45010MW6T1G , NST489AMT1G .
History: BULB39D | MPS6172 | E1-28
History: BULB39D | MPS6172 | E1-28



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