NST65011M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NST65011M
   Código: 2G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT363

Búsqueda de reemplazo de transistor bipolar NST65011M

NST65011M Datasheet (PDF)

0.1. Size:141K onsemi
nst65011mw6.pdf

NST65011MW6Dual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifiers; M

7.1. Size:70K onsemi
nst65010m.pdf

NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers

7.2. Size:139K onsemi
nst65010mw6.pdf