NST847BDP6T5G Todos los transistores

 

NST847BDP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NST847BDP6T5G
   Código: J
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.24 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT963
 

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NST847BDP6T5G Datasheet (PDF)

 ..1. Size:121K  onsemi
 nst847bdp6t5g.pdf pdf_icon

NST847BDP6T5G

NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount www.onsemi.comapplications

 4.1. Size:93K  onsemi
 nst847bdp6.pdf pdf_icon

NST847BDP6T5G

NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

 7.1. Size:101K  onsemi
 nst847bpdp6.pdf pdf_icon

NST847BDP6T5G

NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface

 7.2. Size:153K  onsemi
 nst846bmx2 nst847amx2 nst847bmx2.pdf pdf_icon

NST847BDP6T5G

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA

MOSTRAR MÁS

Otros transistores... NST3946DXV6T1G , NST3946DXV6T5G , NST45010MW6T1G , NST489AMT1G , NST65010M , NST65010MW6T1G , NST65011M , NST65011MW6T1G , D667 , NST857BDP6T5G , 3DD5011 , 2SD5011 , D4203D , NSBA113EDXV6 , NSBA113EDXV6T1 , NSBA113EDXV6T1G , NSBA113EF3 .

 

 
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