NST847BDP6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NST847BDP6T5G

Código: J

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.24 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT963

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NST847BDP6T5G datasheet

 ..1. Size:121K  onsemi
 nst847bdp6t5g.pdf pdf_icon

NST847BDP6T5G

NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount www.onsemi.com applications

 4.1. Size:93K  onsemi
 nst847bdp6.pdf pdf_icon

NST847BDP6T5G

NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat

 7.1. Size:101K  onsemi
 nst847bpdp6.pdf pdf_icon

NST847BDP6T5G

NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in http //onsemi.com one package, this device is ideal for low-power surface

 7.2. Size:153K  onsemi
 nst846bmx2 nst847amx2 nst847bmx2.pdf pdf_icon

NST847BDP6T5G

DATA SHEET www.onsemi.com COLLECTOR General Purpose 3 Transistors 1 BASE NPN Silicon 2 NST846BMX2, EMITTER NST847AMX2, NST847BMX2 3 Features 1 Moisture Sensitivity Level 1 2 ESD Rating - Human Body Model > 4000 V X2DFN3 (1.0x0.6) ESD Rating - Machine Model > 350 V CASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RA

MOSTRAR MÁS

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