Аналоги NST847BDP6T5G. Основные параметры
Наименование производителя: NST847BDP6T5G
Маркировка: J
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.24 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT963
Аналоги (замена) для NST847BDP6T5G
NST847BDP6T5G даташит
nst847bdp6t5g.pdf
NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount www.onsemi.com applications
nst847bdp6.pdf
NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
nst847bpdp6.pdf
NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in http //onsemi.com one package, this device is ideal for low-power surface
nst846bmx2 nst847amx2 nst847bmx2.pdf
DATA SHEET www.onsemi.com COLLECTOR General Purpose 3 Transistors 1 BASE NPN Silicon 2 NST846BMX2, EMITTER NST847AMX2, NST847BMX2 3 Features 1 Moisture Sensitivity Level 1 2 ESD Rating - Human Body Model > 4000 V X2DFN3 (1.0x0.6) ESD Rating - Machine Model > 350 V CASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RA
Другие транзисторы... NST3946DXV6T1G , NST3946DXV6T5G , NST45010MW6T1G , NST489AMT1G , NST65010M , NST65010MW6T1G , NST65011M , NST65011MW6T1G , BC547B , NST857BDP6T5G , 3DD5011 , 2SD5011 , D4203D , NSBA113EDXV6 , NSBA113EDXV6T1 , NSBA113EDXV6T1G , NSBA113EF3 .
Список транзисторов
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