NST857BDP6T5G Todos los transistores

 

NST857BDP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NST857BDP6T5G
   Código: K
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 420 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT963

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NST857BDP6T5G Datasheet (PDF)

 ..1. Size:121K  onsemi
nst857bdp6t5g.pdf

NST857BDP6T5G NST857BDP6T5G

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication

 4.1. Size:93K  onsemi
nst857bdp6.pdf

NST857BDP6T5G NST857BDP6T5G

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

 7.1. Size:90K  onsemi
nst857bf3.pdf

NST857BDP6T5G NST857BDP6T5G

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

 7.2. Size:135K  onsemi
nst857amx2 nst857bmx2.pdf

NST857BDP6T5G NST857BDP6T5G

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC

 7.3. Size:156K  onsemi
nst857bf3t5g.pdf

NST857BDP6T5G NST857BDP6T5G

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

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