Биполярный транзистор NST857BDP6T5G Даташит. Аналоги
Наименование производителя: NST857BDP6T5G
Маркировка: K
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 420 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT963
Аналог (замена) для NST857BDP6T5G
NST857BDP6T5G Datasheet (PDF)
nst857bdp6t5g.pdf

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
nst857bdp6.pdf

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst857bf3.pdf

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857amx2 nst857bmx2.pdf

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC
Другие транзисторы... NST3946DXV6T5G , NST45010MW6T1G , NST489AMT1G , NST65010M , NST65010MW6T1G , NST65011M , NST65011MW6T1G , NST847BDP6T5G , A1266 , 3DD5011 , 2SD5011 , D4203D , NSBA113EDXV6 , NSBA113EDXV6T1 , NSBA113EDXV6T1G , NSBA113EF3 , NSBA113EF3T5G .
History: DTA124XEFRA | IT129 | UMC2NT1G | 2SD1805F | BF216 | KT218G9 | BCY31
History: DTA124XEFRA | IT129 | UMC2NT1G | 2SD1805F | BF216 | KT218G9 | BCY31



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