NSBA115TDP6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBA115TDP6T5G
Código: A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.27 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 160
Encapsulados: SOT963
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NSBA115TDP6T5G datasheet
nsba115tdp6.pdf
NSBA115TDP6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consis
nsba115tf3.pdf
MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
nsba115edxv6.pdf
MUN5136DW1, NSBA115EDXV6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias
Otros transistores... NSBA113EDXV6, NSBA113EDXV6T1, NSBA113EDXV6T1G, NSBA113EF3, NSBA113EF3T5G, NSBA115EDXV6, NSBA115EDXV6T1G, NSBA115TDP6, A42, NSBA115TF3, NSBA115TF3T5G, NSBA123EDXV6, NSBA123EDXV6T1G, NSBA123EF3, NSBA123EF3T5G, NSBA123JDP6, NSBA123JDP6T5G
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