2N6836 Todos los transistores

 ..1. Size:148K  jmnic
 2n6836.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION

 ..2. Size:117K  inchange semiconductor
 2n6836.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PA

 0.1. Size:393K  motorola
 2n6836re.pdf

Order this document MOTOROLA by 2N6836/D SEMICONDUCTOR TECHNICAL DATA 2N6836 Designer's Data Sheet 15 AMPERE Switchmode Series Ultra-Fast NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 450 VOLTS 175 WATTS These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited fo

 9.1. Size:150K  jmnic
 2n6833.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMB

 9.2. Size:79K  inchange semiconductor
 2n6835.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:192K  inchange semiconductor
 2n6837.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6837 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic-

 9.4. Size:122K  inchange semiconductor
 2n6834.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.5. Size:198K  inchange semiconductor
 2n6833.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica