2N6836 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6836
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3
2N6836 Transistor Equivalent Substitute - Cross-Reference Search
2N6836 Datasheet (PDF)
2n6836.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2n6836.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA
2n6836re.pdf
Order this documentMOTOROLAby 2N6836/DSEMICONDUCTOR TECHNICAL DATA2N6836Designer's Data Sheet15 AMPERESwitchmode Series Ultra-FastNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors450 VOLTS175 WATTSThese transistors are designed for highvoltage, highspeed, power switching ininductive circuits where fall time is critical. They are particularly suited fo
2n6833.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMB
2n6835.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
2n6837.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6837DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-
2n6834.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
2n6833.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica
Datasheet: 2N678C , 2N679 , 2N68 , 2N680 , 2N68-13 , 2N6833 , 2N6834 , 2N6835 , 2SC4793 , 2N6837 , 2N694 , 2N695 , 2N696 , 2N696A , 2N696S , 2N697 , 2N697A .
