NSB4904DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSB4904DW1T1G

Código: RC

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT363

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NSB4904DW1T1G datasheet

 ..1. Size:224K  onsemi
 nsb4904dw1t1g nsb4904dw1t2g.pdf pdf_icon

NSB4904DW1T1G

NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 6 5 4 The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2 a monolithic bias network consisting of two resistors; a series base Q1 resistor and a base-emitter resistor. These digital transistors are Q2

 3.1. Size:148K  onsemi
 nsb4904dw1t.pdf pdf_icon

NSB4904DW1T1G

NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 6 5 4 The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2 a monolithic bias network consisting of two resistors; a series base Q1 resistor and a base-emitter resistor. These digital transistors are Q2

 4.1. Size:144K  onsemi
 nsb4904dw1.pdf pdf_icon

NSB4904DW1T1G

NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 6 5 4 The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2 a monolithic bias network consisting of two resistors; a series base Q1 resistor and a base-emitter resistor. These digital transistors are Q2

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