NSBA124XDXV6T1G Todos los transistores

 

NSBA124XDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBA124XDXV6T1G
   Código: 0L
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563

 Búsqueda de reemplazo de transistor bipolar NSBA124XDXV6T1G

 

NSBA124XDXV6T1G Datasheet (PDF)

 2.1. Size:113K  onsemi
nsba124xdxv6.pdf

NSBA124XDXV6T1G
NSBA124XDXV6T1G

MUN5134DW1,NSBA124XDXV6Dual PNP Bias ResistorTransistorsR1 = 22 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias

 6.1. Size:149K  onsemi
nsba124xf3.pdf

NSBA124XDXV6T1G
NSBA124XDXV6T1G

MUN2134, MMUN2134L,MUN5134, DTA124XE,DTA124XM3, NSBA124XF3Digital Transistors (BRT)R1 = 22 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.1. Size:127K  onsemi
nsba124edp6.pdf

NSBA124XDXV6T1G
NSBA124XDXV6T1G

MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 7.2. Size:111K  onsemi
nsba124ef3.pdf

NSBA124XDXV6T1G
NSBA124XDXV6T1G

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.3. Size:127K  onsemi
nsba124edxv6.pdf

NSBA124XDXV6T1G
NSBA124XDXV6T1G

MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

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History: FT4017 | FPC1317 | NA21YY | FP50201

 

 
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