NSBA124XDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSBA124XDXV6T1G

Маркировка: 0L

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.47

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT563

 Аналоги (замена) для NSBA124XDXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSBA124XDXV6T1G даташит

 2.1. Size:113K  onsemi
 nsba124xdxv6.pdf pdf_icon

NSBA124XDXV6T1G

MUN5134DW1, NSBA124XDXV6 Dual PNP Bias Resistor Transistors R1 = 22 kW, R2 = 47 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias

 6.1. Size:149K  onsemi
 nsba124xf3.pdf pdf_icon

NSBA124XDXV6T1G

MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3, NSBA124XF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 47 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 7.1. Size:127K  onsemi
 nsba124edp6.pdf pdf_icon

NSBA124XDXV6T1G

MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

 7.2. Size:111K  onsemi
 nsba124ef3.pdf pdf_icon

NSBA124XDXV6T1G

MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSB9435T1G, NSBA124EDP6, NSBA124EDP6T5G, NSBA124EDXV6, NSBA124EDXV6T1G, NSBA124EF3, NSBA124EF3T5G, NSBA124XDXV6, D882, NSBA124XF3, NSBA124XF3T5G, NSBA143EDP6, NSBA143EDP6T5G, NSBA143EDXV6, NSBA143EDXV6T1G, NSBA143EF3, NSBA143EF3T5G