NSS1C201L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS1C201L
Código: VT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.71 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 110 MHz
Capacitancia de salida (Cc): 14 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT23
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NSS1C201L datasheet
nss1c201l.pdf
NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is i
nss1c201l nsv1c201l.pdf
NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i
nss1c201mz4.pdf
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont
nss1c201mz4 nsv1c201mz4.pdf
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont
Otros transistores... NSVMMUN2232LT3G, NSVMMUN2233LT3G, NSVMMUN2235LT1G, NSS12500UW3T2G, NSS12501UW3T2G, NSS12601CF8T1G, NSS1C200MZ4T1G, NSS1C200MZ4T3G, BC549, NSS1C201MZ4, NSS1C201MZ4T3G, NSS1C300E, NSS1C300ET4G, NSS1C301E, NSS1C301ET4G, NSVMMBT2222ATT1G, NSVMMBT2907AWT1G
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