NSS1C201L - Даташиты. Аналоги. Основные параметры
Наименование производителя: NSS1C201L
Маркировка: VT
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.71 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 110 MHz
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT23
Аналоги (замена) для NSS1C201L
NSS1C201L Datasheet (PDF)
nss1c201l.pdf
NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is i
nss1c201l nsv1c201l.pdf
NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i
nss1c201mz4.pdf
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont
nss1c201mz4 nsv1c201mz4.pdf
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont
Другие транзисторы... NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , NSS12500UW3T2G , NSS12501UW3T2G , NSS12601CF8T1G , NSS1C200MZ4T1G , NSS1C200MZ4T3G , BC549 , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E , NSS1C300ET4G , NSS1C301E , NSS1C301ET4G , NSVMMBT2222ATT1G , NSVMMBT2907AWT1G .
Список транзисторов
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