NSVDTA115EET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVDTA115EET1G

Código: 6N

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT416

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NSVDTA115EET1G datasheet

 ..1. Size:99K  onsemi
 nsvdta115eet1g.pdf pdf_icon

NSVDTA115EET1G

MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains

 6.1. Size:110K  onsemi
 nsvdta113em3t5g.pdf pdf_icon

NSVDTA115EET1G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.2. Size:156K  onsemi
 nsvdta114eet1g.pdf pdf_icon

NSVDTA115EET1G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.3. Size:156K  onsemi
 nsvdta114em3t5g.pdf pdf_icon

NSVDTA115EET1G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

MOSTRAR MÁS

Otros transistores... NSVMMBT6429LT1G, NSVMMBT6517LT1G, NSVMMBT6520LT1G, NSVMMBTA05LT1G, NSVMMBTH10LT1G, NSVDTA113EM3T5G, NSVDTA114EET1G, NSVDTA114EM3T5G, BDT88, NSVDTA123EM3T5G, NSVDTA143ZET1G, NSVDTA144EET1G, NSVDTA144WET1G, NSVDTC113EM3T5G, NSVDTC114YM3T5G, NSVDTC123EM3T5G, NSVDTC143ZET1G