NSVDTA115EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVDTA115EET1G
Código: 6N
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT416
Búsqueda de reemplazo de transistor bipolar NSVDTA115EET1G
NSVDTA115EET1G Datasheet (PDF)
nsvdta115eet1g.pdf
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nsvdta114em3t5g.pdf
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