All Transistors. NSVDTA115EET1G Datasheet

 

NSVDTA115EET1G Datasheet and Replacement


   Type Designator: NSVDTA115EET1G
   SMD Transistor Code: 6N
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT416
 

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NSVDTA115EET1G Datasheet (PDF)

 ..1. Size:99K  onsemi
nsvdta115eet1g.pdf pdf_icon

NSVDTA115EET1G

MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains

 6.1. Size:110K  onsemi
nsvdta113em3t5g.pdf pdf_icon

NSVDTA115EET1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 6.2. Size:156K  onsemi
nsvdta114eet1g.pdf pdf_icon

NSVDTA115EET1G

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 6.3. Size:156K  onsemi
nsvdta114em3t5g.pdf pdf_icon

NSVDTA115EET1G

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Datasheet: NSVMMBT6429LT1G , NSVMMBT6517LT1G , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , NSVDTA113EM3T5G , NSVDTA114EET1G , NSVDTA114EM3T5G , BC547 , NSVDTA123EM3T5G , NSVDTA143ZET1G , NSVDTA144EET1G , NSVDTA144WET1G , NSVDTC113EM3T5G , NSVDTC114YM3T5G , NSVDTC123EM3T5G , NSVDTC143ZET1G .

Keywords - NSVDTA115EET1G transistor datasheet

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