NSBC113EPDXV6 Todos los transistores

 

NSBC113EPDXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC113EPDXV6
   Código: 30
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3
   Paquete / Cubierta: SOT563
 

 Búsqueda de reemplazo de NSBC113EPDXV6

   - Selección ⓘ de transistores por parámetros

 

NSBC113EPDXV6 Datasheet (PDF)

 ..1. Size:77K  onsemi
mun5330dw1 nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 ..2. Size:82K  onsemi
nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 6.1. Size:110K  onsemi
nsbc113ef3.pdf pdf_icon

NSBC113EPDXV6

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

 6.2. Size:131K  onsemi
nsbc113edxv6.pdf pdf_icon

NSBC113EPDXV6

MUN5230DW1,NSBC113EDXV6Dual NPN Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolithic b

Otros transistores... NSVDTC143ZM3T5G , NSVDTC144EM3T5G , NSVDTC144TM3T5G , NSVDTC144WET1G , NSBC113EDXV6 , NSBC113EDXV6T1G , NSBC113EF3 , NSBC113EF3T5G , TIP122 , NSBC113EPDXV6T1G , NSBC114EDP6 , NSBC114EDP6T5G , NSBC114EDXV6 , NSBC114EDXV6T1G , NSBC114EDXV6T5G , NSBC114EF3 , NSBC114EF3T5G .

 

 
Back to Top

 


 
.