NSBC113EPDXV6. Аналоги и основные параметры
Наименование производителя: NSBC113EPDXV6
Маркировка: 30
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 1 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 3
Корпус транзистора: SOT563
Аналоги (замена) для NSBC113EPDXV6
- подборⓘ биполярного транзистора по параметрам
NSBC113EPDXV6 даташит
..1. Size:77K onsemi
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..2. Size:82K onsemi
nsbc113epdxv6.pdf 

MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli
6.1. Size:110K onsemi
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6.2. Size:131K onsemi
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8.1. Size:89K onsemi
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8.2. Size:103K onsemi
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8.4. Size:101K onsemi
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8.5. Size:150K onsemi
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8.6. Size:101K onsemi
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8.7. Size:119K onsemi
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8.8. Size:106K onsemi
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8.9. Size:90K onsemi
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8.12. Size:155K onsemi
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8.13. Size:156K onsemi
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8.15. Size:101K onsemi
nsbc115tdp6.pdf 

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8.17. Size:89K onsemi
nsbc114tdp6.pdf 

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8.18. Size:135K onsemi
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8.19. Size:103K onsemi
nsbc114ypdp6.pdf 

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8.20. Size:90K onsemi
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8.21. Size:117K onsemi
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Другие транзисторы: NSVDTC143ZM3T5G, NSVDTC144EM3T5G, NSVDTC144TM3T5G, NSVDTC144WET1G, NSBC113EDXV6, NSBC113EDXV6T1G, NSBC113EF3, NSBC113EF3T5G, S8050, NSBC113EPDXV6T1G, NSBC114EDP6, NSBC114EDP6T5G, NSBC114EDXV6, NSBC114EDXV6T1G, NSBC114EDXV6T5G, NSBC114EF3, NSBC114EF3T5G