NSBC114EF3T5G Todos los transistores

 

NSBC114EF3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC114EF3T5G
   Código: A
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT1123-3
 

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NSBC114EF3T5G Datasheet (PDF)

 4.1. Size:155K  onsemi
nsbc114ef3.pdf pdf_icon

NSBC114EF3T5G

MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 4.2. Size:117K  onsemi
nsbc114ef3-d.pdf pdf_icon

NSBC114EF3T5G

NSBC114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The digital transistorcontains a single transistor with a monolithic bias network consistingof two resistors;

 6.1. Size:89K  onsemi
nsbc114edp6.pdf pdf_icon

NSBC114EF3T5G

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.2. Size:101K  onsemi
nsbc114epdp6.pdf pdf_icon

NSBC114EF3T5G

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

Otros transistores... NSBC113EPDXV6 , NSBC113EPDXV6T1G , NSBC114EDP6 , NSBC114EDP6T5G , NSBC114EDXV6 , NSBC114EDXV6T1G , NSBC114EDXV6T5G , NSBC114EF3 , TIP122 , NSBC114EPDP6 , NSBC114EPDP6T5G , NSBC114EPDXV6 , NSBC114EPDXV6T1G , NSBC114EPDXV6T5G , NSBC114TDP6 , NSBC114TDP6T5G , NSBC114TDXV6 .

 

 
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