NSBC114EF3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBC114EF3T5G

Código: A

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT1123-3

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NSBC114EF3T5G datasheet

 4.1. Size:155K  onsemi
nsbc114ef3.pdf pdf_icon

NSBC114EF3T5G

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 4.2. Size:117K  onsemi
nsbc114ef3-d.pdf pdf_icon

NSBC114EF3T5G

NSBC114EF3T5G Series Preferred Devices Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors;

 6.1. Size:89K  onsemi
nsbc114edp6.pdf pdf_icon

NSBC114EF3T5G

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 6.2. Size:101K  onsemi
nsbc114epdp6.pdf pdf_icon

NSBC114EF3T5G

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

Otros transistores... NSBC113EPDXV6, NSBC113EPDXV6T1G, NSBC114EDP6, NSBC114EDP6T5G, NSBC114EDXV6, NSBC114EDXV6T1G, NSBC114EDXV6T5G, NSBC114EF3, BC557, NSBC114EPDP6, NSBC114EPDP6T5G, NSBC114EPDXV6, NSBC114EPDXV6T1G, NSBC114EPDXV6T5G, NSBC114TDP6, NSBC114TDP6T5G, NSBC114TDXV6