NSBC114YPDP6T5G Todos los transistores

 

NSBC114YPDP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC114YPDP6T5G
   Código: Q
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT963

 Búsqueda de reemplazo de transistor bipolar NSBC114YPDP6T5G

 

NSBC114YPDP6T5G Datasheet (PDF)

 2.1. Size:103K  onsemi
 nsbc114ypdp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 4.1. Size:103K  onsemi
 nsbc114ypdxv6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 6.1. Size:90K  onsemi
 nsbc114ydp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 6.2. Size:156K  onsemi
 nsbc114yf3.pdf pdf_icon

NSBC114YPDP6T5G

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

MOSTRAR MÁS

Otros transistores... NSBC114YDP6 , NSBC114YDP6T5G , NSBC114YDXV6 , NSBC114YDXV6T1G , NSBC114YDXV6T5G , NSBC114YF3 , NSBC114YF3T5G , NSBC114YPDP6 , BD135 , NSBC114YPDXV6 , NSBC114YPDXV6T1G , NSBC114YPDXV6T5G , NSBC115EDXV6 , NSBC115EDXV6T1G , NSBC115TDP6 , NSBC115TDP6T5G , NSBC115TF3 .

History: CHDTC124TEGP | NSDU10 | CHT857BTPTR

 

 
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