NSBC114YPDP6T5G Todos los transistores

 

NSBC114YPDP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC114YPDP6T5G
   Código: Q
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT963
 

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NSBC114YPDP6T5G Datasheet (PDF)

 2.1. Size:103K  onsemi
 nsbc114ypdp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 4.1. Size:103K  onsemi
 nsbc114ypdxv6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 6.1. Size:90K  onsemi
 nsbc114ydp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.2. Size:156K  onsemi
 nsbc114yf3.pdf pdf_icon

NSBC114YPDP6T5G

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MOSTRAR MÁS

Otros transistores... NSBC114YDP6 , NSBC114YDP6T5G , NSBC114YDXV6 , NSBC114YDXV6T1G , NSBC114YDXV6T5G , NSBC114YF3 , NSBC114YF3T5G , NSBC114YPDP6 , BD135 , NSBC114YPDXV6 , NSBC114YPDXV6T1G , NSBC114YPDXV6T5G , NSBC115EDXV6 , NSBC115EDXV6T1G , NSBC115TDP6 , NSBC115TDP6T5G , NSBC115TF3 .

History: 2SD1685 | 3DG817 | 2SD615 | 2SD2498 | RN2403 | KSR2111 | DRC4124E

 

 
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