NSBC114YPDP6T5G. Аналоги и основные параметры

Наименование производителя: NSBC114YPDP6T5G

Маркировка: Q

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 10 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.21

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.27 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT963

 Аналоги (замена) для NSBC114YPDP6T5G

- подборⓘ биполярного транзистора по параметрам

 

NSBC114YPDP6T5G даташит

 2.1. Size:103K  onsemi
 nsbc114ypdp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 4.1. Size:103K  onsemi
 nsbc114ypdxv6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 6.1. Size:90K  onsemi
 nsbc114ydp6.pdf pdf_icon

NSBC114YPDP6T5G

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 6.2. Size:156K  onsemi
 nsbc114yf3.pdf pdf_icon

NSBC114YPDP6T5G

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBC114YDP6, NSBC114YDP6T5G, NSBC114YDXV6, NSBC114YDXV6T1G, NSBC114YDXV6T5G, NSBC114YF3, NSBC114YF3T5G, NSBC114YPDP6, BD135, NSBC114YPDXV6, NSBC114YPDXV6T1G, NSBC114YPDXV6T5G, NSBC115EDXV6, NSBC115EDXV6T1G, NSBC115TDP6, NSBC115TDP6T5G, NSBC115TF3