NSBC115TF3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBC115TF3
Código: P
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 160
Encapsulados: SOT1123-3
Búsqueda de reemplazo de NSBC115TF3
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NSBC115TF3 datasheet
nsbc115tf3.pdf
MUN2241, MMUN2241L, MUN5241, DTC115TE, DTC115TM3, NSBC115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
nsbc115tpdp6.pdf
NSBC115TPDP6 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http //onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias
nsbc115tdp6.pdf
NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network MARKING This series of digital transistors is designed to replace a single DIAGRAM device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias AFMG SOT-963 network cons
nsbc115edxv6.pdf
MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith
Otros transistores... NSBC114YPDP6T5G, NSBC114YPDXV6, NSBC114YPDXV6T1G, NSBC114YPDXV6T5G, NSBC115EDXV6, NSBC115EDXV6T1G, NSBC115TDP6, NSBC115TDP6T5G, SS8050, NSBC115TF3T5G, NSBC115TPDP6, NSBC115TPDP6T5G, NSVBCX17LT1G, NSVBSP19AT1G, NSVBSS63LT1G, NSVBT2222ADW1T1G, NSVEMC2DXV5T1G
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