NSVBSP19AT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVBSP19AT1G

Código: SP19A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 70 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT223

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NSVBSP19AT1G datasheet

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 nsvbsp19at1g.pdf pdf_icon

NSVBSP19AT1G

BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http //onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE High Voltage TRA

 9.1. Size:81K  onsemi
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NSVBSP19AT1G

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Coll

 9.2. Size:91K  onsemi
 nsvbss63lt1g.pdf pdf_icon

NSVBSP19AT1G

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C

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