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NSVBSP19AT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVBSP19AT1G
   Código: SP19A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT223
 

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NSVBSP19AT1G Datasheet (PDF)

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NSVBSP19AT1G

BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA

 9.1. Size:81K  onsemi
 bss63lt1g nsvbss63lt1g.pdf pdf_icon

NSVBSP19AT1G

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitColl

 9.2. Size:91K  onsemi
 nsvbss63lt1g.pdf pdf_icon

NSVBSP19AT1G

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

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History: KT837B1-IM | 2SA453 | 2SB1203T-TL-E | CD1585BCA | BFQ253A | 2SC3992L | PN3250A

 

 
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