NSVBSP19AT1G Specs and Replacement
Type Designator: NSVBSP19AT1G
SMD Transistor Code: SP19A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT223
NSVBSP19AT1G Substitution
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NSVBSP19AT1G datasheet
BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http //onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE High Voltage TRA... See More ⇒
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Coll... See More ⇒
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C... See More ⇒
Detailed specifications: NSBC115EDXV6T1G, NSBC115TDP6, NSBC115TDP6T5G, NSBC115TF3, NSBC115TF3T5G, NSBC115TPDP6, NSBC115TPDP6T5G, NSVBCX17LT1G, 2SC945, NSVBSS63LT1G, NSVBT2222ADW1T1G, NSVEMC2DXV5T1G, NSVEMD4DXV6T5G, NSVEMX1DXV6T1G, NSVMBT3904DW1T3G, NSBC123EDXV6, NSBC123EDXV6T1G
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