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NSVBSS63LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVBSS63LT1G
   Código: BM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 110 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT23
 

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NSVBSS63LT1G Datasheet (PDF)

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 bss63lt1g nsvbss63lt1g.pdf pdf_icon

NSVBSS63LT1G

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitColl

 ..2. Size:91K  onsemi
 nsvbss63lt1g.pdf pdf_icon

NSVBSS63LT1G

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

 9.1. Size:100K  onsemi
 nsvbsp19at1g.pdf pdf_icon

NSVBSS63LT1G

BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA

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History: OC363 | D44C1 | MPS8550S | D45D | SS8550CTA | RN2118FT

 

 
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