NSVBSS63LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVBSS63LT1G
Código: BM
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 110 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: SOT23
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NSVBSS63LT1G datasheet
bss63lt1g nsvbss63lt1g.pdf
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Coll
nsvbss63lt1g.pdf
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C
nsvbsp19at1g.pdf
BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http //onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE High Voltage TRA
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