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NSVEMX1DXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVEMX1DXV6T1G
   Código: 3X
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT563
 

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NSVEMX1DXV6T1G Datasheet (PDF)

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NSVEMX1DXV6T1G

EMX1DXV6T1,EMX1DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.DUAL NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board S

 9.1. Size:102K  onsemi
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NSVEMX1DXV6T1G

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

 9.2. Size:72K  onsemi
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NSVEMX1DXV6T1G

EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace

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