NSVEMX1DXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVEMX1DXV6T1G
Código: 3X
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT563
Búsqueda de reemplazo de transistor bipolar NSVEMX1DXV6T1G
NSVEMX1DXV6T1G Datasheet (PDF)
nsvemx1dxv6t1g.pdf
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