NSVEMX1DXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVEMX1DXV6T1G
SMD Transistor Code: 3X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT563
NSVEMX1DXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSVEMX1DXV6T1G Datasheet (PDF)
nsvemx1dxv6t1g.pdf
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EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis
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EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
