NSBC123JDXV6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBC123JDXV6T5G

Código: 7M

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT563

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NSBC123JDXV6T5G datasheet

 2.1. Size:127K  onsemi
nsbc123jdxv6.pdf pdf_icon

NSBC123JDXV6T5G

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

 5.1. Size:128K  onsemi
nsbc123jdp6.pdf pdf_icon

NSBC123JDXV6T5G

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

 6.1. Size:103K  onsemi
nsbc123jpdxv6.pdf pdf_icon

NSBC123JDXV6T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
nsbc123jpdp6.pdf pdf_icon

NSBC123JDXV6T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

Otros transistores... NSBC123EF3, NSBC123EF3T5G, NSBC123EPDXV6, NSBC123EPDXV6T1G, NSBC123JDP6, NSBC123JDP6T5G, NSBC123JDXV6, NSBC123JDXV6T1G, 2SA1015, NSBC123JF3, NSBC123JF3T5G, NSBC123JPDP6, NSBC123JPDP6T5G, NSBC123JPDXV6, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6