All Transistors. NSBC123JDXV6T5G Datasheet

 

NSBC123JDXV6T5G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSBC123JDXV6T5G
   SMD Transistor Code: 7M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT563

 NSBC123JDXV6T5G Transistor Equivalent Substitute - Cross-Reference Search

   

NSBC123JDXV6T5G Datasheet (PDF)

 2.1. Size:127K  onsemi
nsbc123jdxv6.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 5.1. Size:128K  onsemi
nsbc123jdp6.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 6.1. Size:103K  onsemi
nsbc123jpdxv6.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
nsbc123jpdp6.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.3. Size:156K  onsemi
nsbc123jf3.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 6.4. Size:399K  onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf

NSBC123JDXV6T5G
NSBC123JDXV6T5G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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