NSBC123JPDXV6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBC123JPDXV6
Código: 35
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: SOT563
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NSBC123JPDXV6 datasheet
nsbc123jpdxv6.pdf
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl
nsbc123jpdp6.pdf
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl
nsbc123jf3.pdf
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)
nsbc123jdxv6.pdf
MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi
Otros transistores... NSBC123JDP6T5G, NSBC123JDXV6, NSBC123JDXV6T1G, NSBC123JDXV6T5G, NSBC123JF3, NSBC123JF3T5G, NSBC123JPDP6, NSBC123JPDP6T5G, BC547B, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6, NSBC123TDP6T5G, NSBC123TF3, NSBC123TF3T5G, NSBC123TPDP6, NSBC123TPDP6T5G
History: PN4143
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