Биполярный транзистор NSBC123JPDXV6 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSBC123JPDXV6
Маркировка: 35
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT563
Аналоги (замена) для NSBC123JPDXV6
NSBC123JPDXV6 Datasheet (PDF)
nsbc123jpdxv6.pdf
MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl
nsbc123jpdp6.pdf
MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl
nsbc123jf3.pdf
MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)
nsbc123jdxv6.pdf
MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
nsbc123jdp6.pdf
MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf
MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050