Биполярный транзистор NSBC123JPDXV6 Даташит. Аналоги
Наименование производителя: NSBC123JPDXV6
Маркировка: 35
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT563
Аналог (замена) для NSBC123JPDXV6
NSBC123JPDXV6 Datasheet (PDF)
nsbc123jpdxv6.pdf

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl
nsbc123jpdp6.pdf

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl
nsbc123jf3.pdf

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)
nsbc123jdxv6.pdf

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
Другие транзисторы... NSBC123JDP6T5G , NSBC123JDXV6 , NSBC123JDXV6T1G , NSBC123JDXV6T5G , NSBC123JF3 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , D667 , NSBC123JPDXV6T1G , NSBC123JPDXV6T5G , NSBC123TDP6 , NSBC123TDP6T5G , NSBC123TF3 , NSBC123TF3T5G , NSBC123TPDP6 , NSBC123TPDP6T5G .
History: LBC848BLT3G | 2SC3602 | 2SC1206A
History: LBC848BLT3G | 2SC3602 | 2SC1206A



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