NSVMUN5236T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMUN5236T1G
Código: 8N
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.31 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar NSVMUN5236T1G
NSVMUN5236T1G Datasheet (PDF)
nsvmun5236t1g.pdf
MUN2236, MMUN2236L,MUN5236, DTC115EE,DTC115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)device and its external resistor bias network. The Bias Resistor PIN 1R1BASETransistor (BRT) conta
nsvmun5233dw1t3g.pdf
MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
nsvmun5215dw1t1g.pdf
MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with
nsvmun5212dw1t1g.pdf
MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The
nsvmun5211dw1t3g.pdf
MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
nsvmun5214dw1t3g.pdf
MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
nsvmun5213dw1t3g.pdf
MUN5213DW1,NSBC144EDXV6,NSBC144EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
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