NSVMUN5236T1G Specs and Replacement
Type Designator: NSVMUN5236T1G
SMD Transistor Code: 8N
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT323
NSVMUN5236T1G Substitution
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NSVMUN5236T1G datasheet
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) conta... See More ⇒
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MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The... See More ⇒
Detailed specifications: NSVMUN5135DW1T1G, NSVMUN5137DW1T1G, NSVMUN5211DW1T3G, NSVMUN5212DW1T1G, NSVMUN5213DW1T3G, NSVMUN5214DW1T3G, NSVMUN5215DW1T1G, NSVMUN5233DW1T3G, BC547, NSVMUN5111DW1T3G, NSVMUN5113DW1T3G, NSVMUN5312DW1T2G, NSVMUN5312DW1T3G, NSVMUN5314DW1T3G, NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, NSVMUN5332DW1T1G
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