NSVMUN5111DW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMUN5111DW1T3G
Código: 0A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.26 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de NSVMUN5111DW1T3G
NSVMUN5111DW1T3G Datasheet (PDF)
nsvmun5111dw1t3g.pdf

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
nsvmun5113dw1t3g.pdf

MUN5113DW1,NSBA144EDXV6,NSBA144EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1) This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wi
nsvmun5131t1g.pdf

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
nsvmun5137dw1t1g.pdf

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit
Otros transistores... NSVMUN5137DW1T1G , NSVMUN5211DW1T3G , NSVMUN5212DW1T1G , NSVMUN5213DW1T3G , NSVMUN5214DW1T3G , NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G , BD139 , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G .
History: 2SD549
History: 2SD549



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