NSVMUN5111DW1T3G. Аналоги и основные параметры

Наименование производителя: NSVMUN5111DW1T3G

Маркировка: 0A

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 10 kOhm

Встроенный резистор цепи смещения R2 = 10 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 35

Корпус транзистора: SOT363

 Аналоги (замена) для NSVMUN5111DW1T3G

- подборⓘ биполярного транзистора по параметрам

 

NSVMUN5111DW1T3G даташит

 0.1. Size:89K  onsemi
 nsvmun5111dw1t3g.pdf pdf_icon

NSVMUN5111DW1T3G

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 5.1. Size:90K  onsemi
 nsvmun5113dw1t3g.pdf pdf_icon

NSVMUN5111DW1T3G

MUN5113DW1, NSBA144EDXV6, NSBA144EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wi

 6.1. Size:109K  onsemi
 nsvmun5131t1g.pdf pdf_icon

NSVMUN5111DW1T3G

MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

 6.2. Size:132K  onsemi
 nsvmun5137dw1t1g.pdf pdf_icon

NSVMUN5111DW1T3G

MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

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