NSVMUN5312DW1T3G Todos los transistores

 

NSVMUN5312DW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVMUN5312DW1T3G
   Código: 12
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT363
 

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NSVMUN5312DW1T3G Datasheet (PDF)

 0.1. Size:110K  onsemi
 nsvmun5312dw1t3g.pdf pdf_icon

NSVMUN5312DW1T3G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 0.2. Size:110K  onsemi
 nsvmun5312dw1t2g.pdf pdf_icon

NSVMUN5312DW1T3G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 5.1. Size:103K  onsemi
 nsvmun5314dw1t3g.pdf pdf_icon

NSVMUN5312DW1T3G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 5.2. Size:80K  onsemi
 nsvmun5316dw1t1g.pdf pdf_icon

NSVMUN5312DW1T3G

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon

MOSTRAR MÁS

Otros transistores... NSVMUN5213DW1T3G , NSVMUN5214DW1T3G , NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G , NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , 2N3055 , NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G .

History: KT912A | BLX88 | D41DU2 | BTP8550A3 | 2SC2670 | 2SC1236 | BFR72

 

 
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