Справочник транзисторов. NSVMUN5312DW1T3G

 

Биполярный транзистор NSVMUN5312DW1T3G Даташит. Аналоги


   Наименование производителя: NSVMUN5312DW1T3G
   Маркировка: 12
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT363
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NSVMUN5312DW1T3G Datasheet (PDF)

 0.1. Size:110K  onsemi
nsvmun5312dw1t3g.pdfpdf_icon

NSVMUN5312DW1T3G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 0.2. Size:110K  onsemi
nsvmun5312dw1t2g.pdfpdf_icon

NSVMUN5312DW1T3G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 5.1. Size:103K  onsemi
nsvmun5314dw1t3g.pdfpdf_icon

NSVMUN5312DW1T3G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 5.2. Size:80K  onsemi
nsvmun5316dw1t1g.pdfpdf_icon

NSVMUN5312DW1T3G

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD1589R | BC828-25 | S2055F | 2SD2083 | 2S93A | GME1001 | BD244BG

 

 
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