NSVBCP69T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVBCP69T1G

Código: CE

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 85

Encapsulados: SOT223

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NSVBCP69T1G datasheet

 ..1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

NSVBCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

 ..2. Size:122K  onsemi
 nsvbcp69t1g.pdf pdf_icon

NSVBCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

 8.1. Size:69K  onsemi
 nsvbcp53-16t3g.pdf pdf_icon

NSVBCP69T1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 8.2. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

NSVBCP69T1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http //onsemi.com applications. Features MEDIUM POWER NPN SILICON High Current 1.0 A HIGH CURRENT TRANSISTOR The SOT-223 package can be solder

MOSTRAR MÁS

Otros transistores... NSVMUN5331DW1T1G, NSVMUN5332DW1T1G, NSVMUN5333DW1T1G, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G, NSVPZTA92T1G, NSVBCP53-16T3G, NSVBCP56-10T3G, S8050, NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G