NSVBCP69T1G. Аналоги и основные параметры

Наименование производителя: NSVBCP69T1G

Маркировка: CE

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 60 MHz

Статический коэффициент передачи тока (hFE): 85

Корпус транзистора: SOT223

 Аналоги (замена) для NSVBCP69T1G

- подборⓘ биполярного транзистора по параметрам

 

NSVBCP69T1G даташит

 ..1. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

NSVBCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

 ..2. Size:122K  onsemi
 nsvbcp69t1g.pdf pdf_icon

NSVBCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

 8.1. Size:69K  onsemi
 nsvbcp53-16t3g.pdf pdf_icon

NSVBCP69T1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 8.2. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

NSVBCP69T1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http //onsemi.com applications. Features MEDIUM POWER NPN SILICON High Current 1.0 A HIGH CURRENT TRANSISTOR The SOT-223 package can be solder

ПОКАЗАТЬ ЕЩЁ

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