NSVBCW68GLT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVBCW68GLT1G

Código: DG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.23 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 18 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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NSVBCW68GLT1G datasheet

 ..1. Size:65K  onsemi
nsvbcw68glt1g.pdf pdf_icon

NSVBCW68GLT1G

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

 8.1. Size:96K  onsemi
nsvbcw32lt1g.pdf pdf_icon

NSVBCW68GLT1G

BCW32LT1G General Purpose Transistors NPN Silicon Features http //onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-E

 9.1. Size:69K  onsemi
nsvbcp53-16t3g.pdf pdf_icon

NSVBCW68GLT1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 9.2. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf pdf_icon

NSVBCW68GLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

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