All Transistors. NSVBCW68GLT1G Datasheet

 

NSVBCW68GLT1G Transistor. Datasheet pdf. Equivalent

Type Designator: NSVBCW68GLT1G

Marking Code: DG

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.23 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

NSVBCW68GLT1G Transistor Equivalent Substitute - Cross-Reference Search

NSVBCW68GLT1G Datasheet (PDF)

1.1. nsvbcw68glt1g.pdf Size:65K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCW68GL General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

4.1. nsvbcw32lt1g.pdf Size:96K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCW32LT1G General Purpose Transistors NPN Silicon Features http://onsemi.com • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-E

5.1. nsvbc114epdxv6t1g.pdf Size:101K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

5.2. nsvbc857cwt1g.pdf Size:81K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features • S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

5.3. nsvbc847bdw1t2g.pdf Size:144K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http://onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

5.4. nsvbc848cdw1t1g.pdf Size:110K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B • S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

5.5. nsvbc818-40lt1g.pdf Size:103K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC818-40L, NSVBC818-40L General Purpose Transistors NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Uni

5.6. nsvbc847blt3g.pdf Size:116K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 www.onsemi.com • ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 • These Devices are Pb-

5.7. nsvbc857blt3g.pdf Size:86K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless other

5.8. nsvbc114edxv6t1g.pdf Size:89K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

5.9. nsvbc817-16lt1g.pdf Size:89K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http://onsemi.com NPN Silicon COLLECTOR Features 3 • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

5.10. nsvbcp53-16t3g.pdf Size:69K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com • High Current • NPN Complement is BCP56 MEDIUM POWER HIGH • The SOT-223 Package can be soldered using wave or reflow

5.11. nsvbc847btt1g.pdf Size:64K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-75/SOT-416 package which COLLECTOR is designed for low power surface mount applications. 3 Features 1 • NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control

5.12. nsvbcx17lt1g.pdf Size:61K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose http://onsemi.com Transistors Voltage and Current are Negative for PNP Transistors SOT-23 Features (TO-236) CASE 318-08 • S and NSV Prefix for Automotive and Other Applications Requiring STYLE 6 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP NPN • These Device

5.13. nsvbc124edxv6t1g.pdf Size:146K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

MUN5212DW1, NSBC124EDXV6, NSBC124EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

5.14. nsvbc857btt1g.pdf Size:67K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http://onsemi.com Features COLLECTOR • NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi

5.15. nsvbc848clt1g.pdf Size:116K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 www.onsemi.com • ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 • These Devices are Pb-

5.16. nsvbc858clt1g.pdf Size:86K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless other

5.17. nsvbc850blt1g.pdf Size:116K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 www.onsemi.com • ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 • These Devices are Pb-

5.18. nsvbc114ydxv6t1g.pdf Size:165K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http://onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

5.19. nsvbc846bm3t5g.pdf Size:100K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 http://onsemi.com • ESD Rating: Human Body Model: >4000 V Machine Model: >400 V COLLECTOR • NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE • This is a Pb-Free Device 2 EMI

5.20. nsvbc850clt1g.pdf Size:116K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 www.onsemi.com • ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 • These Devices are Pb-

5.21. nsvbc848bwt1g.pdf Size:109K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

5.22. nsvbcp56-10t3g.pdf Size:69K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http://onsemi.com applications. Features MEDIUM POWER NPN SILICON • High Current: 1.0 A HIGH CURRENT TRANSISTOR • The SOT-223 package can be solder

5.23. nsvbc858blt1g.pdf Size:801K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

5.24. nsvbcp69t1g.pdf Size:122K _onsemi

NSVBCW68GLT1G
NSVBCW68GLT1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER • High Current: IC = -1.0 A PNP SILICON • The SOT-223 Package Can Be Soldered

Datasheet: NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G , NSVBCP69T1G , NSVBCW32LT1G , 2N3906 , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G , NSV40501UW3T2G , NSV60100DMTWTBG , NSV60101DMTWTBG .

 


NSVBCW68GLT1G
  NSVBCW68GLT1G
  NSVBCW68GLT1G
  NSVBCW68GLT1G
 
NSVBCW68GLT1G
  NSVBCW68GLT1G
  NSVBCW68GLT1G
  NSVBCW68GLT1G
 

social 

LIST

Last Update

BJT: 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |