NSVMUN2233T1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMUN2233T1G
Código: 8K
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.38
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta:
SOT346
Búsqueda de reemplazo de transistor bipolar NSVMUN2233T1G
NSVMUN2233T1G
Datasheet (PDF)
..1. Size:218K onsemi
nsvmun2233t1g.pdf 
MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
5.1. Size:156K onsemi
nsvmun2237t1g.pdf
MUN2237, MMUN2237L,MUN5237, DTC144WE,DTC144WM3, NSBC144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
6.1. Size:218K onsemi
nsvmun2212t1g.pdf
MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
7.1. Size:111K onsemi
nsvmun2112t1g.pdf
MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
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