NSVMUN2233T1G. Аналоги и основные параметры

Наименование производителя: NSVMUN2233T1G

Маркировка: 8K

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 4.7 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.38 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 800

Корпус транзистора: SOT346

 Аналоги (замена) для NSVMUN2233T1G

- подборⓘ биполярного транзистора по параметрам

 

NSVMUN2233T1G даташит

 ..1. Size:218K  onsemi
 nsvmun2233t1g.pdf pdf_icon

NSVMUN2233T1G

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias network

 5.1. Size:156K  onsemi
 nsvmun2237t1g.pdf pdf_icon

NSVMUN2233T1G

MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.1. Size:218K  onsemi
 nsvmun2212t1g.pdf pdf_icon

NSVMUN2233T1G

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias network

 7.1. Size:111K  onsemi
 nsvmun2112t1g.pdf pdf_icon

NSVMUN2233T1G

MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVBCP53-16T3G, NSVBCP56-10T3G, NSVBCP69T1G, NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, NSVMUN2112T1G, NSVMUN2212T1G, TIP3055, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, NSV60101DMTWTBG, NSV60200LT1G, NSV60201LT1G, NSV60600MZ4T1G, NSV60600MZ4T3G