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NSV60201LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV60201LT1G
   Código: VJ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 45 pF
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23
 

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NSV60201LT1G Datasheet (PDF)

 ..1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60201LT1G

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 7.1. Size:123K  onsemi
 nsv60200lt1g.pdf pdf_icon

NSV60201LT1G

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 9.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60201LT1G

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.2. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60201LT1G

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

MOSTRAR MÁS

Otros transistores... NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G , NSV40501UW3T2G , NSV60100DMTWTBG , NSV60101DMTWTBG , NSV60200LT1G , BC557 , NSV60600MZ4T1G , NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G , NSVBC817-16LT1G , NSVBC818-40LT1G , NSVBC846BM3T5G .

History: H639 | 8550QLT1

 

 
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