NSV60201LT1G. Аналоги и основные параметры

Наименование производителя: NSV60201LT1G

Маркировка: VJ

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.54 W

Макcимально допустимое напряжение коллектор-база (Ucb): 140 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 45 pf

Статический коэффициент передачи тока (hFE): 150

Корпус транзистора: SOT23

 Аналоги (замена) для NSV60201LT1G

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NSV60201LT1G даташит

 ..1. Size:121K  onsemi
 nsv60201lt1g.pdf pdf_icon

NSV60201LT1G

NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 7.1. Size:123K  onsemi
 nsv60200lt1g.pdf pdf_icon

NSV60201LT1G

NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 9.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60201LT1G

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 9.2. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60201LT1G

NSS60101DMT 60 V, 1 A, Low VCE(sat) NPN Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVMUN2112T1G, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, NSV60101DMTWTBG, NSV60200LT1G, A1941, NSV60600MZ4T1G, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G, NSVBC817-16LT1G, NSVBC818-40LT1G, NSVBC846BM3T5G