NSS20201MR6 Todos los transistores

 

NSS20201MR6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20201MR6
   Código: VS0
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.75 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TSOP6
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NSS20201MR6 Datasheet (PDF)

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 nss20201mr6.pdf pdf_icon

NSS20201MR6

NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 0.1. Size:118K  onsemi
 nss20201mr6t1g.pdf pdf_icon

NSS20201MR6

NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:119K  onsemi
 nss20201lt1g.pdf pdf_icon

NSS20201MR6

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T

 6.2. Size:125K  onsemi
 nss20201l-d.pdf pdf_icon

NSS20201MR6

NSS20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1786 | 2SC4379U-Y | BCV61B | KT997A | TK72 | 2N462 | MPSA64

 

 
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