NSS40300MZ4T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40300MZ4T1G
Código: 40300
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 175
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de NSS40300MZ4T1G
NSS40300MZ4T1G Datasheet (PDF)
nss40300mz4t1g.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300mz4t3g.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300mz4.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300md.pdf

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl
Otros transistores... NSVBC857BTT1G , NSVBC857CWT1G , NSVBC858BLT1G , NSVBC858CLT1G , NSS20101J , NSS20200LT1G , NSS20201LT1G , NSS20201MR6 , TIP42 , NSS40300MZ4T3G , NSS40301MDR2G , NSS40301MZ4T1G , NSS40301MZ4T3G , NSS40302PDR2G , NSS40500UW3T2G , NSS40501UW3T2G , NSS40600CF8T1G .
History: FMB200 | KT501B | 2N6559 | 2SC1106
History: FMB200 | KT501B | 2N6559 | 2SC1106



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mj2955 | mje15030 | 2n3904 transistor | 2sd424 | 2sc828 | 2n4125 | tip42c transistor | c1815 transistor datasheet