Биполярный транзистор NSS40300MZ4T1G Даташит. Аналоги
Наименование производителя: NSS40300MZ4T1G
Маркировка: 40300
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 160 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 175
Корпус транзистора: SOT223
Аналог (замена) для NSS40300MZ4T1G
NSS40300MZ4T1G Datasheet (PDF)
nss40300mz4t1g.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300mz4t3g.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300mz4.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
nss40300md.pdf

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl
Другие транзисторы... NSVBC857BTT1G , NSVBC857CWT1G , NSVBC858BLT1G , NSVBC858CLT1G , NSS20101J , NSS20200LT1G , NSS20201LT1G , NSS20201MR6 , TIP42 , NSS40300MZ4T3G , NSS40301MDR2G , NSS40301MZ4T1G , NSS40301MZ4T3G , NSS40302PDR2G , NSS40500UW3T2G , NSS40501UW3T2G , NSS40600CF8T1G .
History: 2SC1195
History: 2SC1195



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