NSS40601CF8T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS40601CF8T1G

Código: VB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.4 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: DFN3X2

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NSS40601CF8T1G datasheet

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NSS40601CF8T1G

NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 3.1. Size:88K  onsemi
 nss40601cf8-d.pdf pdf_icon

NSS40601CF8T1G

NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 7.1. Size:128K  onsemi
 nss40600cf8-d.pdf pdf_icon

NSS40601CF8T1G

NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

 7.2. Size:103K  onsemi
 nss40600cf8t1g.pdf pdf_icon

NSS40601CF8T1G

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(

MOSTRAR MÁS

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