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NSS60101DMT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS60101DMT
   Código: AN
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.27 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: WDFN6
 

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NSS60101DMT Datasheet (PDF)

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NSS60101DMT

DATA SHEETwww.onsemi.comLow VCE(sat) NPN Transistors 60 Volt, 1 AmpNPN Low VCE(sat) Transistors60 V, 1 AMARKINGNSS60101DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6WDFN6miniature surface mount devices featuring ultra low saturation voltage AN MG2 5CASE 506ANG(VCE(sat)) and high current gain capability. These are designed for use3 41

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NSS60101DMT

Low VCE(sat) NPNTransistors, 60 V, 1 ANSS60101DMR6ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 7.1. Size:116K  onsemi
nss60100dmt.pdf pdf_icon

NSS60101DMT

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.1. Size:107K  onsemi
nss60601mz4-d.pdf pdf_icon

NSS60101DMT

NSS60601MZ460 V, 6.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typica

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